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Journal Articles

Domain boundaries in the GaAs(001)-2$$times$$4 surface

Takahashi, Masamitsu; Yoneda, Yasuhiro; Yamamoto, Naomasa*; Mizuki, Junichiro

Physical Review B, 68(8), p.085321_1 - 085321_5, 2003/08

https://doi.org/10.1103/PhysRevB.68.085321
 Times Cited Count：17 Percentile：62.72(Materials Science, Multidisciplinary)

The $$alpha$$, $$beta$$ and $$gamma$$ phases of the GaAs(001)-2$$times$$4 surface have been investigated by ${it in situ}$ surface X-ray diffraction in an As flux and at temperatures ranging from 480$$^circ$$C to 610$$^circ$$C. It has been found that the fractional-order peaks originating from the fourfold symmetry show shift in the [110] direction as well as significant broadening of the peaks in the $$alpha$$ and $$gamma$$ phases. The direction of the peak shift is characteristic in each phase. This behavior is explained by the formation of the antiphase domain boundaries. The atomic structure of the domain boundaries is discussed.

Oral presentation

Measurement of surface stress between Si(111)7$$times$$7 and H-Si(111)1$$times$$1

Uozumi, Yuki; Asaoka, Hidehito

no journal, , 

no abstracts in English

Oral presentation

Analysis of Si(110) clean surfaces after desorption of hydrogen terminated layer and oxidized layer

Suzuki, Shota; Asaoka, Hidehito; Uozumi, Yuki; Kondo, Keietsu; Yamaguchi, Kenji

no journal, , 

no abstracts in English

Oral presentation

The effects of Si(110) surface heating on fabricating 16$$times$$2 single and double domain structure

Suzuki, Shota; Yano, Masahiro; Uozumi, Yuki; Asaoka, Hidehito; Yamaguchi, Kenji*

no journal, , 

no abstracts in English

Oral presentation

Fabrication of Si(110)-16$$times$$2 surface by low temperature desorption of oxide layer

Suzuki, Shota; Yano, Masahiro; Uozumi, Yuki; Asaoka, Hidehito; Yamaguchi, Kenji*

no journal, , 

no abstracts in English

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